6-inch/8-inch SiC 4H N-Type Substrate
Category: Compound Semiconductor Material
Exhibitor: HERMES-EPITEK CORP.
Booth No: M412
Characteristic
Material Characteristic and Performance
• Wide-bandgap Semicoductor Material
• High Power Density, High Transition Efficiency, High Thermal Conductivity
• Widely adapted in EV traction inverter
R&D Strengths
• 4"~8" Crystal Growth Know-how.
• 4"~8" Self-developed RF Furnace
• Competitive Crystal Quality
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