Non-Destructive Inspection System
Model: JadeSiC-NK / SP3055A
Category: Compound Semiconductor Equipment
Exhibitor: SPIROX CORPORATION
Booth No: N214
Characteristic
JadeSiC-NK employs advanced non-linear optical technology for whole wafer scanning of SiC substrates, identifying killer defects within the substrate. It substitutes the current high-cost, destructive KOH (potassium hydroxide) etching detection method, leading to increased production yields and process improvement.
【Features】
● Detect and identify defects on the surface and inside of SiC substrates with advanced NLO (non-linear optics) technology.
● Non-destructive inspection to replace costly KOH etching method.
● Whole SiC wafer defect scanning ability provides more accurate defect density distribution over the sampling interpolation of KOH etching method.
● Focus on killer defects (BPD, TED, TSD, MicroPipe, Stacking Fault) detection for SiC substrates.
● Support 2”, 4”, 6”, 8” SiC substrates inspection.
● Optional function of MicroArea 3D scan available.
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