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C3 International Compound Semiconductors Conference 2024 Register

 

Date: 2024/4/25 (Thu.)   9:30 - 17:20

Venue: R505ab, Taipei Nangang Exhibition Center Hall 1

Fee: NT$4,000

 

Schedule

 

Date
Topic
Company
Language
09:30 - 09:40
opening remarks
/ EN
09:30 - 09:40
opening remarks
TEEIA
/ EN
09:40 - 10:10
Increased PFC power efficiency by GaN, coming EMI issues and solutions
Rohm semiconductor Ltd
/ EN
10:10 - 10:40
Silicon Carbide Wafer Burn In
Pentamaster Instrumentation Sdn. Bhd.
/ EN
10:40 - 11:10
The SiC power devices for the fast charger
SiCEV Electronics, Co., Ltd.
/ EN
11:10 - 11:40
GaN or SiC? GaN & SiC? WBG is the future
Infineon Technologies
/ EN
11:40 - 12:10
COHERENT 化合物半導體的沿革與願景
Coherent Inc.
/ EN
12:10 - 12:40
Group guide-Compound Semiconductor Pavilion
https://www.surveycake.com/s/vZNvX
/ EN
13:40 - 13:45
VIP Speech
National Yang Ming Chiao Tung University
/ EN
13:45 - 14:15
Semiconductor equipment market and technologies for the production of SiC devices
Yole Intelligence
/ EN
14:15 - 14:45
Ga2O3 Single Crystal Wafers for Power Device Applications
Novel Crystal Technology, Inc
/ EN
14:45 - 15:15
Plasma polish solution to prepare Epi-ready SiC substrates for Power Applications
Oxford Instruments Plasma Technology
/ EN
15:15 - 15:45
About three times higher productivity than conventional products Ion-implanters for SiC power devices 「IMPHEAT-II」
Nissin Ion Equipment Co., Ltd
/ EN
15:45 - 16:00
Tea Break
16:00 - 16:30
Turnkey Solution for SiC Test and Reliability
Semight Instruments Co.,Ltd.
/ EN
16:30 - 17:00
TCAD tools for wide bandgap Power device development
KuasaSemi Ltd
/ EN
17:00 - 17:20
Wrap-Up and Closing Remarks
KLA Corporation
/ EN

 

Speakers

 

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